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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-220F package Complement to type 2SD1668 Low collector saturation voltage Wide ASO APPLICATIONS Relay drivers High speed inverters;converters General high current switching application PINNING PIN 1 2 3 Emitter Collector Base DESCRIPTION 2SB1135 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER HAN INC Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector-base voltage SEM GE Open base CONDITIONS Open emitter OND IC TOR UC MAX -60 -50 -6 -7 -12 -0.5 UNIT V V V A A A Open collector Ta=25ae PC Collector dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 2 W 30 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-1mA ;RBE= IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-4A; IB=-0.4A VCB=-40V ;IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-5A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 MIN -50 -60 -6 2SB1135 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V V V -0.4 -100 -100 280 |I |I V A A Switching times ton ts tf Fall time Transition frequency Turn-on time Storage time HAN INC R 100-200 S 140-280 SEM GE OND IC TOR UC 10 0.2 0.7 0.1 MHz |I |I |I s s s IC=-2.0A IB1=-IB2=-0.2A hFE-1 Classifications Q 70-140 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1135 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1135 SEM GE HAN INC OND IC TOR UC 4 |
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